MANHASSET, N.Y. — Vishay Intertechnology Inc. will license its Vishay Siliconix TrenchFET power MOSFET technology to KEC, a Korean-based discrete components.
As the first manufacturer of Trench power MOSFETs in Korea, KEC will address a local market for power MOSFETs valued yearly at 250 billion Won ($266.7 million). Until now, demand for Trench power MOSFETs in Korea has been supplied entirely by imported devices.
The TrenchFET technology from Vishay (Malvern, Pa.), pioneered by subsidiary Siliconix, enables power MOSFETs with low on-resistance, allowing for maller, more power-efficient, and cooler-running devices and end products.
Siliconix developed vertical trench power MOSFETs to overcome the limitations of planar DMOS devices, where a parasitic junction FET effect places a severe limit on the benefit of increasing transistor cell densities. TrenchFET power MOSFETs overcome this barrier by vertically redirecting the current flow in the device's channel in a direct path between the topside source and the backside drain contact. This provides for significant increases in power MOSFET performance.
